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Unilateral transducer power gain

A unilateral device is one whose scattering parameter text_wrap_inline2965. This implies that the transistor network has no internal feedback. This requirement is very difficult to achieve at microwave frequency. Theoretically, an external circuit can be used to add feedback such that the effect of internal feedback can be eliminated. This method is called neutralization. However, the result of this technique is satisfactory only when the amplifier is operating at VHF frequency with a narrow bandwidth.

The unilateral transducer power gain is
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text_wrap_inline2967 is a parameter of transistors usually given in the manufacturer's data sheet. text_wrap_inline2969, text_wrap_inline2971 are related to the degree of matching between the transistor and the terminations. Maximum unilateral transducer power gain text_wrap_inline2973 can be achieved if input and output matching networks can provide maximum power transfer between the transistor and terminations, i.e. they are conjugately matched, text_wrap_inline2975 and text_wrap_inline2977.
equation614

Example In a 50 text_wrap_inline2807 system, a transistor has the following S-parameter at 1.3 GHz.
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Find

  1. the maximum power gain,
  2. the optimum terminations.

Solution


  1. displaymath2949

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    The maximum power gain is
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  2. The optimum terminations are
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    From a normalized impedance chart, a reflection coefficient of text_wrap_inline2981 corresponds to a normalized impedance of z=0.26 +j1.8. Hence
    displaymath2955